HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

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IRF

HEXFET Power MOSFET

Infineon

英飞凌

PXI & AXIe Instruments, Software, Reference Solutions and Services

文件：2.58103 Mbytes 页数：8 Pages

KEYSIGHT

是德科技

THREE-TERMINAL LOW DROPOUT VOLTAGE REGULATOR

DESCRIPTION The µPC2933A, 2905A of low dropout voltage three terminal positive regulators is constructed with PNP output transistor. The µPC2933A, 2905A feature the ability to source 1 A of output current with a low dropout voltage of typically 0.7 V. The power dissipation of the µPC2933A, 2

文件：104.88 Kbytes 页数：16 Pages

NEC

瑞萨

THREE-TERMINAL LOW DROPOUT VOLTAGE REGULATOR

Features • Output current in excess of 1.0 A • Low dropout voltage VDIF = 0.7 V TYP. (IO = 1 A) • On-chip over-current and thermal protection circuit • On-chip output transistor safe operating area protection circuit

文件：353.93 Kbytes 页数：14 Pages

RENESAS

瑞萨

THREE-TERMINAL LOW DROPOUT VOLTAGE REGULATOR

DESCRIPTION The µPC2933A, 2905A of low dropout voltage three terminal positive regulators is constructed with PNP output transistor. The µPC2933A, 2905A feature the ability to source 1 A of output current with a low dropout voltage of typically 0.7 V. The power dissipation of the µPC2933A, 2

文件：104.88 Kbytes 页数：16 Pages

NEC

瑞萨