Take your expectations higher with the latest LCR meters

文件：523.299 Kbytes 页数：11 Pages

HP

安捷伦

Take your expectations higher with the latest LCR meters

文件：502.78 Kbytes 页数：11 Pages

HP

安捷伦

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES • Low on-resistance RDS(on)1 = 10.3 mΩ TYP. (VGS = –10 V, ID = –5.0 A) RDS(on)2 = 14.6 mΩ TYP. (VGS = –4.5 V, ID = –5.0 A) RDS(on)3 = 16.5 mΩ TYP. (VGS = –4.0 V, ID = –5.0 A) • Low Ciss : Ciss =2600 pF TYP. • Built-in G-S protect

文件：292.03 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1731 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-resistance RDS(on)1 = 10.3 mΩ TYP. (VGS = –10 V, ID = –5.0 A) RDS(on)2 = 14.6 mΩ TYP. (VGS = –

文件：72.24 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES • Low on-resistance RDS(on)1 = 10.3 mΩ TYP. (VGS = –10 V, ID = –5.0 A) RDS(on)2 = 14.6 mΩ TYP. (VGS = –4.5 V, ID = –5.0 A) RDS(on)3 = 16.5 mΩ TYP. (VGS = –4.0 V, ID = –5.0 A) • Low Ciss : Ciss =2600 pF TYP. • Built-in G-S protect

文件：292.03 Kbytes 页数：10 Pages

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瑞萨