TZ3555A

Crystal Unit SMD 2.5x2.0 26.00MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage MoistureSensitivityLevel(MSL):Level-1 DescriptionandApplications: Surfacemount2.5mmx2.0mmcrystalunitforuseinwireless

3555

RAST-2.5-Steckverbinder,Raster2,5/5,0mm

RAST-2.5-Steckverbinder,Raster2,5/5,0mm RAST2.5connectors,pitch2.5/5.0mm ConnecteursRAST2.5,pas2,5/5,0mm

3555

RAST2.5connectors,pitch2.5/5.0mm

3555

SchnellePr체fungdesAlterungszustandsvonAkkus

InstantaneousCheckonBatteryDeterioration Intodaysmultimediaage,themaintenanceofstoragebatteriesusedininformationtechnologydevicesistakingonincreasedimportance. The3550seriesofBATTERYHiTESTERScangiveinstantaneousresultsonthestateofabattery,onathree-ranksca

ACE3555R

1CHADJCurrent-LimitedPowerDistributionSwitch

ACE3555RBNH

1CHADJCurrent-LimitedPowerDistributionSwitch

APL3555

USBPower-DistributionSwitches

APT3555AN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10.5A@TC=25℃ ·DrainSourceVoltage :VDSS=350V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D

APT3555BN

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=350V(Min) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·highvoltage,highspeedpowerswitching

APT3555DN

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=350V(Min) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·highvoltage,highspeedpowerswitching