CD3313

Digitallycontrolledfour-channelaudioprocessorwithtoneandvolumeprocessing

Features ★Inputmultiplexerincluded ●Threestereosignalinputs ●Inputgaincanbesettobestmatchvarioussignalsources ★Four-channelattenuation ●Fourchannelscanbecontrolledindependently.Balanceandloudnesscanbeattenuatedandboostedby1.25dBperlevel ●Independentmut

CD3313EO

Digitallycontrolledfour-channelaudioprocessorwithtoneandvolumeprocessing

Features ★Inputmultiplexerincluded ●Threestereosignalinputs ●Inputgaincanbesettobestmatchvarioussignalsources ★Four-channelattenuation ●Fourchannelscanbecontrolledindependently.Balanceandloudnesscanbeattenuatedandboostedby1.25dBperlevel ●Independentmut

CD3313EP

Digitallycontrolledfour-channelaudioprocessorwithtoneandvolumeprocessing

Features ★Inputmultiplexerincluded ●Threestereosignalinputs ●Inputgaincanbesettobestmatchvarioussignalsources ★Four-channelattenuation ●Fourchannelscanbecontrolledindependently.Balanceandloudnesscanbeattenuatedandboostedby1.25dBperlevel ●Independentmut

CGS3313M

CMOSCrystalClockGenerators

GeneralDescription TheCGS3311,CGS3312,CGS3313,CGS3314,CGS3315,CGS3316,CGS3317,CGS3318andCGS3319devicesaredesignedforClockGenerationandSupport(CGS)applicationsupto110MHz.TheCGS331xseriesofdevicesarecrystalcontrolledCMOSoscillatorsrequiringaminimumofexternal

CPH3313

Ultrahigh-SpeedSwitchingApplications

Features •LowON-resistance. •Ultrahigh-speedswitching. •2.5Vdrive.

D3313FB

FixedInductorsforCellularPhone

FEATURES •Lowprofile(3.5mmMax.squareand1.3mmMax.height). •Featuresanopenmagneticcircuit,butitsthindimensionsresultinminimumleakagefluxandresultinminimumelectromagneticinterferencegenerated. •SuitableasInductorsforCellularphones. •RoHScompliant.

EML3313

LEADLESSSURFACEMOUNT3.3VPECLCLOCK

EVAL-LTC3313

EvaluatingtheLTC33135V,15ASynchronousStep-DownSilentSwitcherin3mm×3mmLQFN

GENERALDESCRIPTION TheEVAL-LTC3313EV-A-ZfeaturestheLTC3313,15Alowvoltage synchronousstep-downSilentSwitcher®thatoperatesasa2MHz, 2.25Vto5.5Vinput,1.2V,15Aoutputbuckregulator.The LTC3313supportsanoutputvoltage(VOUT)from0.5Vtotheinput voltage(VIN)with

FJN3313R

NPNEpitaxialSiliconTransistor

SwitchingApplication(BiasResistorBuiltIn) •Switchingcircuit,Inverter,Interfacecircuit,DriverCircuit •BuiltinbiasResistor(R1=2.2KΩ,R2=47KΩ) •ComplementtoFJN4313R

FKBB3313

DualP-ChannelMOSFET

Features AdvancedTrenchMOSTechnology 100EASGuaranteed GreenDeviceAvailable Applications BatteryPoweredSystems. PortableEquipment.