Crystal Unit SMD 2.0x1.6 40.0MHz

Features: Surface Mount Hermetic Package Excellent Reliability Performance Good Frequency Perturbation and Stability over temperature Ultra Miniature Package Description and Applications: Surface mount 2.0mmx1.6mm crystal unit for use in wireless communications devices, especially for a n

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TAI-SAW

嘉硕科技

Crystal Resonators

TAI-SAW

嘉硕科技

3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system. FEATURES • Supply voltage: VCC = 2.7 to 3.3 V • Circuit current: ICC = 3

文件：404.53 Kbytes 页数：16 Pages

NEC

瑞萨

3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system. FEATURES • Supply voltage: VCC = 2.7 to 3.3 V • Circuit current: ICC = 3

文件：404.53 Kbytes 页数：16 Pages

NEC

瑞萨

3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC2762TB, µPC2763TB and µPC2771TB are silicon monolithic integrated circuits designed as amplifier for mobile communications. These ICs operate at 3 V. The medium output power is suitable for RF-TX of mobile communications system. These IC is manufactured using NEC’s 20 GHz fT N

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NEC

瑞萨