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TZ2612D

Crystal Unit SMD 3.2x2.5 24.00MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage MoistureSensitivityLevel(MSL):Level-1 DescriptionandApplications: Surfacemount3.2mmx2.5mmcrystalunitforcustomerforus

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

2612

BandpassFilter

KRKR Electronics, Inc.

KR Electronics, Inc.

2612

SMDRFManualTunableInductor

YANTELYantel Corporation

研通高频深圳市研通高频技术有限公司

2612B

2600BSystemSourceMeter®SMUInstruments

KeyFeatures •Tightlyintegrated,4-quadrantvoltage/current sourceandmeasureinstrumentsofferbestinclass performancewith6½-digitresolution •Familyofmodelsofferindustry’swidestdynamic range:10Apulseto0.1fAand200Vto100nV •Built-inwebbrowserbasedsoftwareenabl

TEKTRONIXTektronix

泰克泰克科技(中国)有限公司

2612B

2600BSystemSourceMeterSMUInstruments

TEKTRONIXTektronix

泰克泰克科技(中国)有限公司

2612G

LEDBACKLIGHTFORLCDDISPLAY

LEDBACKLIGHTFORLCDDISPLAY

MICRO-ELECTRONICS

Micro Electronics

AAT2612

Step-DownDC/DCConverterWithThreeHighPSRRLDOs

SKYWORKSSkyworks Solutions Inc.

思佳讯美国思佳讯公司

AG2612G

LEDBACKLIGHTFORLCDDISPLAY

LEDBACKLIGHTFORLCDDISPLAY

MICRO-ELECTRONICS

Micro Electronics

AN2612

Single5-VDCpowersupply

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

AP2612GY-HF

Capableof1.8VGateDrive,SimpleDriveRequirement

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

DEM2612C

Lowprofile(2.6x2.8mmsquare,1.2mmMax.height).

Toko

Toko Inc.

DG2612

Low-Voltage,LowRON,SPDTAudioSwitchwithNegativeSwingCapability

FEATURES •Lowvoltageoperation(1.8Vto5.5V) •Lowon-resistance-RON:1.0Ωat2.7V •Highbandwidth BENEFITS •Negativesignalswingcapability •Shuntswitchtoeliminateswitchingnoise •SimplifieddesignwithdirectDCcoupling •SpacesavingSC-89package APPLICATIONS •

VishayVishay Siliconix

威世科技

DG2612

Low-Voltage,LowrON,SPDTAudioSwitchwithNegativeSwingCapability

VishayVishay Siliconix

威世科技

DG2612

Low-Voltage,LowrON,SPDTAudioSwitchwithNegativeSwingCapability

VishayVishay Siliconix

威世科技

EC2612

40GHzSuperLowNoisepHEMT

UMSUnited Monolithic Semiconductors

United Monolithic Semiconductors

EC2612

40GHzSuperLowNoisePHEMT

Description TheEC2612isbasedona0.15µmgatepseudomorphichighelectronmobilitytransistor(0.15µmPHEMT)technology.Gatewidthis120µmandthe0.15µmT-shapedaluminiumgatefeatureslowresistanceandexcellentreliability.Thedeviceshowsaveryhightransconductancewhichleadsto

UMSUnited Monolithic Semiconductors

United Monolithic Semiconductors

FDC2612

200VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON)andfastswitchingspeed. Features •1.1

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDC2612

N-ChannelMOSFET200V,1.5A,0.7

Features Vbs=200V b=1.5A Roson)

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟電子台舟電子股份有限公司

FDD2612

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.9A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=720mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDD2612

200VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON)andfastswitchingspeed. Features •4.9A,2

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

供应商型号品牌批号封装库存备注价格
TST
23+
-
2000
华南总代
询价
TST
23+
SMD
56000
TST全系列在售,支持实单
询价
TST
24+
4-SMD,无引线
9350
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
更多TZ2612D供应商 更新时间2024-5-23 9:18:00