TZ2012B规格书应用电路批发供应友顺TAI-SAW-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
TZ2012B	文件：417.09 Kbytes Page：8 Pages	Crystal Unit SMD 3.2x2.5 16MHz Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount3.2mmx2.5mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan	TAI-SAW TAI-SAW TECHNOLOGY CO., LTD.	TAI-SAW
UB2012	文件：263.06 Kbytes Page：17 Pages	ADVANCEDLINEARCHARGEMANAGEMENTICFORSINGLEANDTWO-CELLLITHIUM-IONANDLITHIUM-POLYMER	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
UB2012	文件：320.68 Kbytes Page：17 Pages	ADVANCEDLINEARCHARGEMANAGEMENTICFORSINGLE DESCRIPTION UTCUB2012isdesignedforportableelectronicswithlowercost.Itsadvantagesofhigh-accuracyvoltage/currentregulation,chargingstatusindication,temperaturemonitoring,andautomaticcharge-ratecompensation. FEATURES *IdealforSingle4.1V,4.2VandDual-Cell8.2V,8.4VLi-I	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
UB2012	文件：284.47 Kbytes Page：17 Pages	ADVANCEDLINEARCHARGEMANAGEMENTIC	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
ULN2012	文件：186.29 Kbytes Page：6 Pages	HIGHVOLTAGEHIGHCURRENTDARLINGTONARRAY	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
ULN2012	文件：749.9 Kbytes Page：8 Pages	HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS [SPRAGUE] HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商	ETC1
ULN2012A	文件：749.9 Kbytes Page：8 Pages	HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS [SPRAGUE] HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商	ETC1
ULN2012L	文件：749.9 Kbytes Page：8 Pages	HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS [SPRAGUE] HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商	ETC1
UPG2012TB	文件：266.93 Kbytes Page：8 Pages	L-BANDSPDTSWITCH DESCRIPTION ThePG2012TBisaGaAsMMICforL-bandSPDT(SinglePoleDoubleThrow)switchwhichweredevelopedformobilephoneandanotherL-bandapplication. Thisdevicecanoperatefrequencyfrom0.5GHzto2.5GHz,havingthelowinsertionlossandhighisolation.Thisdeviceishousedina	CEL California Eastern Laboratories	CEL
UPG2012TB	文件：72.47 Kbytes Page：9 Pages	L-BANDSPDTSWITCH	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
UPG2012TB	文件：120.9 Kbytes Page：7 Pages	NECs1/4WSINGLECONTROLL-BANDSPDTSWITCH DESCRIPTION TheµPG2012TBisaGaAsMMICforL-bandSPDT(SinglePoleDoubleThrow)switchwhichweredevelopedformobilephoneandanotherL-bandapplication. Thisdevicecanoperatefrequencyfrom0.5GHzto2.5GHz,havingthelowinsertionlossandhighisolation. Thisdeviceishousedin	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
UPG2012TB	文件：325.3 Kbytes Page：11 Pages	GaAsINTEGRATEDCIRCUIT FEATURES •Supplyvoltage:VDD=2.7to3.0V(2.8VTYP.) •Switchcontrolvoltage:Vcont(H)=2.7to3.0V(2.8VTYP.) :Vcont(L)=−0.2to+0.2V(0VTYP.) •Lowinsertionloss:LINS1=0.27dBTYP.@f=0.5to1.0GHz,VDD=2.8V,Vcont=2.8V/0V :LINS2=0.30dBTYP.@f=2.	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPG2012TK	文件：306 Kbytes Page：7 Pages	NECs쩌WSINGLECONTROLL,S-BANDSPDTSWITCH DESCRIPTION TheµPG2012TKisaGaAsMMICforL-bandSPDT(SinglePoleDoubleThrow)switchwhichweredevelopedformobilephoneandanotherL-bandapplication. Thisdevicecanoperatefrequencyfrom0.5GHzto2.5GHz,havingthelowinsertionlossandhighisolation. Thisdeviceishous	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
UPG2012TK	文件：109.58 Kbytes Page：9 Pages	L-BANDSPDTSWITCH	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
UPG2012TK	文件：363.3 Kbytes Page：8 Pages	WSINGLECONTROLL,S-BANDSPDTSWITCH	CEL California Eastern Laboratories	CEL
UPG2012TK	文件：309.88 Kbytes Page：11 Pages	GaAsINTEGRATEDCIRCUIT FEATURES •Supplyvoltage:VDD=2.7to3.0V(2.8VTYP.) •Switchcontrolvoltage:Vcont(H)=2.7to3.0V(2.8VTYP.) :Vcont(L)=−0.2to+0.2V(0VTYP.) •Lowinsertionloss:LINS1=0.27dBTYP.@f=0.5to1.0GHz,VDD=2.8V,Vcont=2.8V/0V :LINS2=0.30dBTYP.@f=2.	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
VACL2012	文件：366.69 Kbytes Page：2 Pages	Terminal,Compression	HUBBELLHUBBELL INCORPORATED 哈伯尔公司	HUBBELL
VACL2012BN	文件：363.09 Kbytes Page：2 Pages	Terminal,Compression	HUBBELLHUBBELL INCORPORATED 哈伯尔公司	HUBBELL
VAUL2012	文件：376.7 Kbytes Page：2 Pages	AluminumCompressionTerminalfor2/0AL/CU,2/06/1ACSR,3/0COMPACT	HUBBELLHUBBELL INCORPORATED 哈伯尔公司	HUBBELL
VLS2012E	文件：7.59375 Mbytes Page：53 Pages	InductorsforPowerCircuitsWoundFerrite OverviewoftheVLS-ESeries FEATURES Magneticshieldtypewoundinductorforpowercircuits. Low-profileproductlineupwithmax.heightsof0.8mm,0.95mm,1.0mm,1.2mm,and1.5mmallowingfordifferentusages. Highmagneticshieldconstructionandcompatiblewithhigh-densitymount	TDKTDK Corporation TDK株式会社东电化（中国）投资有限公司	TDK

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市索歌特科技有限公司	TZ2012B	TST	23+	-	172000	华南总代	询价
深圳市艾宇欣科技有限公司	TZ2028C	TST	NA	N/A	19	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市航宇科工半导体有限公司	TZ-202N	台湾宝工	21+	NA	4600	中国航天工业部战略合作伙伴行业领导者	询价
深圳市粤骏腾电子科技有限公司	TZ2031	TST	24+		15800	真实库存/绝无虚假/支持送货	询价
现代芯城（深圳）科技有限公司	TZ2031		24+	N/A	46000	一级代理-主营优势-实惠价格-不悔选择	询价

更多TZ2012B供应商更新时间2024-9-23 9:18:00

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