TZ0913A

Crystal Unit SMD 3.2x2.5 25.000MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount3.2mmx2.5mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

0913

GraphiteBrush

0913

METALBRUSH

BCC0913

Single-EndedCordsets

Basicfeatures ApplicationOperatingvoltage Approval/Conformity CE cULus EAC WEEE

C0913A

ComputerCable

MGF0913A

High-powerGaAsFET(smallsignalgainstage)

MGF0913A

L&SBANDGaAsFET[SMDnon-matched]

DESCRIPTION TheMGF0913AGaAsFETwithanN-channelschottkyGate,isdesignedforuseUHFbandamplifiers. FEATURES Highoutputpower Po=31dBm(TYP.)@f=1.9GHz,Pin=18dBm Highpowergain Gp=13dB(TYP.)@f=1.9GHz Highpoweraddedefficiency nadd=48(TYP.

MRFIC0913

900MHzGSMCELLULARINTEGRATEDPOWERAMPLIFIERGaAsMONOLITHICINTEGRATEDCIRCUIT

TheMRFICLine900MHzGaAsIntegratedPowerAmplifier ThisintegratedcircuitisintendedforGSMclassIVhandsets.Thedeviceisspecifiedfor2.8wattsoutputpowerand48minimumpoweraddedefficiencyunderGSMsignalconditionsat4.8Voltsupplyvoltage.Toachievethissuperiorperform

RLB0913

RadialLeadInductor

RSZ-0913

1WattSMDMiniatureIsolatedSingleOutput