首页 >TYPE8P2S-A>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
8ATHYRISTOR SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
THYRISTORS 8A(av.)MOLDISOLATEDTHYRISTOR “The897JSMand8P,SMAarePgatealdiffusedmoldtypeThyristorgrantedAmpOn-stateAveragsCurrent(T=88°C),withratedvoltagesupto400volts. FEATURES -MoldIsolatedpackage. -100Asurgecurrent. -HighVoltage:Vomw,Vamw=200V(8P2SM,8P | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
8ARESINMOLDTYPESCR DESCRIPTION The8P2SMAand8P4SMAareresinmoldtypeSCRswithan averageon-statecurrent8A(TC=88°C),repetitivepeakoffstatevoltage200Vand400V. FEATURES •CanbereplacedwithTO-220ABpackage •Highallowableon-currentwhenusingasingleunit | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
8AMOLDISOLATEDSCR | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
THYRISTORS 8A(av.)MOLDISOLATEDTHYRISTOR “The897JSMand8P,SMAarePgatealdiffusedmoldtypeThyristorgrantedAmpOn-stateAveragsCurrent(T=88°C),withratedvoltagesupto400volts. FEATURES -MoldIsolatedpackage. -100Asurgecurrent. -HighVoltage:Vomw,Vamw=200V(8P2SM,8P | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
HighCurrentDensitySurfaceMountSchottkyBarrierRectifiers | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighCurrentDensitySurfaceMountSchottkyBarrierRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighCurrentDensitySurface-MountSchottkyBarrierRectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiency •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020 •AEC-Q101qualifiedavailable -Automotiveorderingcode:baseP/NHM3 •Materi | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SchottkyBarrierRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighCurrentDensitySurface-MountSchottkyBarrierRectifiers FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •Lowforwardvoltagedrop •Lowpowerloss,highefficiency •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotiveorderingc | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
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