首页 >TY5616>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
2-FUNCTION,4-DIGITLCDAUTOMOTIVECLOCK-PROGRAMMABLE FEATURES ■DigitalTuningofCrystalFrequency ■PROMforStoringFrequencyCorrectionInformation ■12or24HourTimekeepingOption ■FlashingColon ■TwoSwitchesControlAllSettingFunctions ■HighNoiseImmunity ■InternalPower-UpResetCircuitry ■InternalVoltageRegulation | ALLEGRO Allegro MicroSystems | ALLEGRO | ||
HighCurrentChokes | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
Ultra-LowPowerAudioCODECforMobileDevices | REALTEKRealtek Semiconductor Corp. 瑞昱瑞昱半导体股份有限公司 | REALTEK | ||
Ultra-LowPowerAudioCODECforMobileDevices | REALTEKRealtek Semiconductor Corp. 瑞昱瑞昱半导体股份有限公司 | REALTEK | ||
Ultra-LowPowerAudioCODECforMobileDevices | REALTEKRealtek Semiconductor Corp. 瑞昱瑞昱半导体股份有限公司 | REALTEK | ||
High-Current,High-PerformanceDrMOSPowerModule GeneralDescription TheAOZ5616QIisahighefficiencysynchronousbuck powerstagemoduleconsistingoftwoasymmetrical MOSFETsandanintegrateddriver.TheMOSFETsare individuallyoptimizedforoperationinthesynchronous buckconfiguration.TheHigh-SideMOSFETisoptimized toachieve | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
LowpowerNPNTransistor SMALLSIGNALNPNTRANSISTORS ■SILICONEPITAXIALPLANARPNPMEDIUMVOLTAGETRANSISTORS ■SOT-223PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THEPNPCOMPLEMENTARYTYPESAREBCP52-16ANDBCP53-16RESPECTIVELY APPLICATIONS ■MEDIUMVOLTAGELOADSWITCHTRANSISTORS ■ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
80VNPNMEDIUMPOWERTRANSISTOR Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT) | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
NPNMEDIUMPOWERTRANSISTORSINSOT223 Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
80VNPNMEDIUMPOWERTRANSISTOR Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT) | DIODESDiodes Incorporated 美台半导体 | DIODES |
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