TXS0108E-Q1 Automotive 8-Bit Bi-directional, Level-Shifting, Voltage Translator for Open-Drain and Push-Pull Applications

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: –40°C to 125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • No direction-control signal needed • Maximum data rates: – 110Mbps (push pull) – 1.2Mbps (open drain)

文件：1.60545 Mbytes 页数：32 Pages

TI

德州仪器

TXS0108E 8-Bit Bi-Directional, Level-Shifting, Voltage Translator for Open-Drain and Push-Pull Applications

1 Features • No direction-control signal needed • Maximum data rates: – 110Mbps (push pull) – 1.2Mbps (open drain) • 1.4V to 3.6V on A port and 1.65V to 5.5V on B port (VCCA ≤ VCCB) • No power-supply sequencing required – either VCCA or VCCB can be ramped first • Latch-up performance exce

文件：2.60842 Mbytes 页数：42 Pages

TI

德州仪器

TXS0108E 8-Bit Bi-Directional, Level-Shifting, Voltage Translator for Open-Drain and Push-Pull Applications

1 Features • No direction-control signal needed • Maximum data rates: – 110Mbps (push pull) – 1.2Mbps (open drain) • 1.4V to 3.6V on A port and 1.65V to 5.5V on B port (VCCA ≤ VCCB) • No power-supply sequencing required – either VCCA or VCCB can be ramped first • Latch-up performance exce

文件：2.60771 Mbytes 页数：42 Pages

TI

德州仪器

TXS0108E-Q1 Automotive 8-Bit Bi-directional, Level-Shifting, Voltage Translator for Open-Drain and Push-Pull Applications

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: –40°C to 125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • No direction-control signal needed • Maximum data rates: – 110Mbps (push pull) – 1.2Mbps (open drain)

文件：1.90082 Mbytes 页数：38 Pages

TI

德州仪器

TXS0108E 8-Bit Bi-Directional, Level-Shifting, Voltage Translator for Open-Drain and Push-Pull Applications

1 Features • No direction-control signal needed • Maximum data rates: – 110Mbps (push pull) – 1.2Mbps (open drain) • 1.4V to 3.6V on A port and 1.65V to 5.5V on B port (VCCA ≤ VCCB) • No power-supply sequencing required – either VCCA or VCCB can be ramped first • Latch-up performance exce

文件：2.74651 Mbytes 页数：45 Pages

TI

德州仪器

TXS0108E 8-Bit Bi-Directional, Level-Shifting, Voltage Translator for Open-Drain and Push-Pull Applications

1 Features • No direction-control signal needed • Maximum data rates: – 110Mbps (push pull) – 1.2Mbps (open drain) • 1.4V to 3.6V on A port and 1.65V to 5.5V on B port (VCCA ≤ VCCB) • No power-supply sequencing required – either VCCA or VCCB can be ramped first • Latch-up performance exce

文件：2.72152 Mbytes 页数：45 Pages

TI

德州仪器

8-Bit Bi-directional, Level-Shifting, Voltage Translator

文件：1.22163 Mbytes 页数：28 Pages

TI

德州仪器

TXS0108E 8-Bit Bi-directional, Level-Shifting, Voltage Translator for Open-Drain and Push-Pull Applications

文件：2.12908 Mbytes 页数：36 Pages

TI

德州仪器

面向漏极开路和推挽应用的 8 位双向电压电平转换器

这款 8 位非反向转换器使用两个独立的可配置电源轨。A 端口跟踪 VCCA 引脚的电源电压。VCCA 引脚可接受 1.4V 到 3.6V 范围内的任意电源电压。B 端口跟踪 VCCB 引脚的电源电压。VCCB 引脚可接受 1.65V 到 5.5V 范围内的任意电源电压。这两个输入电源引脚可实现 1.5V、1.8V、2.5V、3.3V 和 5V 电压节点之间的任意低压双向转换。 输出使能 (OE) 输入为低电平时，所有输出均将置于高阻抗 (Hi-Z) 状态。 为确保输出在上电或断电期间处于 Hi-Z 状态，需通过一个下拉电阻将 OE 接至 GND。该电阻的最小值取决于驱动器的拉电流能力。如需了解 • 符合汽车类应用的 AEC-Q100 标准 \n• 器件人体放电模式 (HBM) 静电放电 (ESD) 分类等级 2 \n• 无需方向控制信号\n• 110Mbps（推挽）\n• A 端口 1.4V 至 3.6V；B 端口 1.65V 至 5.5V (VCCA ≤ VCCB)\n• 锁断性能超过 100mA，符合 JESD 78 II 类规范的要求\n• 2000V 人体放电模式 (A114-B)\n• IEC 61000-4-2 ESD（B 端口） \n• ±6kV 气隙放电;

TI

德州仪器

TXS0108E-Q1 Automotive 8-Bit Bi-directional, Level-Shifting, Voltage Translator for Open-Drain and Push-Pull Applications

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: –40°C to 125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • No direction-control signal needed • Maximum data rates: – 110Mbps (push pull) – 1.2Mbps (open drain)

文件：1.60545 Mbytes 页数：32 Pages

TI

德州仪器