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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
TWM-1L3-SC-PK	文件：100 bytes Page：1 Pages	包装：散装类别：电缆，电线 - 管理标记物描述：WIRE MARKER, 0.75 IN H	Brady Corporation Brady Corporation	Brady Corporation
AA1L3M	文件：83.54 Kbytes Page：4 Pages	COMPOUNDTRANSISTOR on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=4.7kΩ,R2=4.7kΩ) •ComplementarytransistorwithAN1L3M	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
AA1L3M	文件：238.36 Kbytes Page：6 Pages	on-chipresistorNPNsiliconepitaxialtransistorFormid-speedswitching FEATURES •On-chipbiasresistor (R1=4.7kΩ,R2=4.7kΩ) •ComplementarytransistorwithAN1L3M	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
AA1L3N	文件：245.81 Kbytes Page：6 Pages	on-chipresistorNPNsiliconepitaxialtransistorFormid-speedswitching FEATURES •On-chipbiasresistor (R1=4.7kΩ,R2=10kΩ) •ComplementarytransistorwithAN1L3N	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
AA1L3N	文件：91.21 Kbytes Page：4 Pages	On-chipresistorNPNsiliconepitaxialtransistorFormid-speedswitching on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=4.7kΩ,R2=10kΩ) •ComplementarytransistorwithAN1L3N	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
AA1L3Z	文件：119.94 Kbytes Page：2 Pages	NPNSILICONTRANSISTOR DESCRIPTION TheAA1L3Zisdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypeNPNtransistorequivalentcircuit.	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
AB1L3N	文件：85.06 Kbytes Page：6 Pages	on-chipresistorNPNsiliconepitaxialtransistor on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES •Currentdriveavailableupto0.7A •On-chipbiasresistor •Lowpowerconsumptionduringdrive	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
ADSP-H1L3	文件：181.74 Kbytes Page：10 Pages	1.0??SingleDigitPCBBasedLEDDisplay	AVAGOAvago 安华高安华高科技	AVAGO
AN1L3M	文件：83.87 Kbytes Page：4 Pages	on-chipresistorPNPsiliconepitaxialtransistor on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=4.7kΩ,R2=4.7kΩ) •ComplementarytransistorwithAA1L3M	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
AN1L3M	文件：238.61 Kbytes Page：6 Pages	on-chipresistorPNPsiliconepitaxialtransistorFormid-speedswitching FEATURES •On-chipbiasresistor (R1=4.7kΩ,R2=4.7kΩ) •ComplementarytransistorwithAA1L3M	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
AN1L3N	文件：237.58 Kbytes Page：6 Pages	on-chipresistorPNPsiliconepitaxialtransistorFormid-speedswitching FEATURES •On-chipbiasresistor (R1=4.7kΩ,R2=10kΩ) •ComplementarytransistorwithAA1L3N	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
AN1L3N	文件：82.9 Kbytes Page：4 Pages	on-chipresistorPNPsiliconepitaxialtransistor on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=4.7kΩ,R2=10kΩ) •ComplementarytransistorwithAA1L3N	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
AN1L3Z	文件：120.06 Kbytes Page：2 Pages	PNPSILICONTRANSISTOR DESCRIPTION TheAN1L3Zisdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypePNPtransistorequivalentcircuit.	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
AP1L3N	文件：84.58 Kbytes Page：6 Pages	on-chipresistorNPNsiliconepitaxialtransistor on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES •Currentdriveavailableupto0.7A •On-chipbiasresistor •Lowpowerconsumptionduringdrive	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
AR1L3N	文件：96.56 Kbytes Page：6 Pages	on-chipresistorPNPsiliconepitaxialtransistor on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES •HighcurrentdrivessuchasICoutputandactuatoravailable •On-chipbiasresistor •Lowpowerconsumptionduringdrive	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
BA1L3M	文件：90.21 Kbytes Page：4 Pages	On-chipresistorNPNSiliconEpitaxialTransistor on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=4.7kΩ,R2=4.7kΩ) •ComplementarytransistorwithBN1L3M	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
BA1L3M	文件：244.85 Kbytes Page：6 Pages	CMPOUNDTRANSISTOR	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
BA1L3N	文件：238.88 Kbytes Page：6 Pages	COMPOUNDTRANSISTOR on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=4.7kΩ,R2=10kΩ) •ComplementarytransistorwithBN1L3N	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
BA1L3N	文件：84.24 Kbytes Page：4 Pages	on-chipresistorNPNsiliconepitaxialtransistor on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=4.7kΩ,R2=10kΩ) •ComplementarytransistorwithBN1L3N	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
BA1L3Z	文件：124.65 Kbytes Page：2 Pages	NPNSILICONTRANSISTOR DESCRIPTION TheBA1L3Zisdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypeNPNtransistorequivalentcircuit.	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC

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产品属性

产品编号：
TWM-1L3-SC-PK
制造商：
Brady Corporation
类别：
电缆，电线 - 管理 > 标记物
包装：
散装
描述：
WIRE MARKER, 0.75 IN H

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更多TWM-1L3-SC-PK供应商更新时间2024-6-24 16:16:00

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