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EMB16N06A

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)16mΩ ID42A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMB16N06CS

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMB16N06G

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)16mΩ ID6.7A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMB16N06H

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)16mΩ ID42A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMB16N06V

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)16mΩ ID15A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

FTP16N06N

N-ChannelEnhancement

InPowerProductLines

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

NP16N06QLK

DualN-channelPowerMOSFET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP16N06YLL

60V??16A??N-channelPowerMOSFETApplication:Automotive

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

PJD16N06A

60VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@8A

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PJD16N06A-AU

60VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@8A

PANJITPANJIT International Inc.

强茂強茂股份有限公司

RFD16N06

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

RFD16N06

16A,60V,0.047Ohm,N-ChannelPowerMOSFET

Description TheseN-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.ThisprocesswhichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFD16N06LE

16A,60V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingamodernprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance. Features •16A,60V •rDS(ON)=0.047Ω •TemperatureCompensati

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFD16N06LESM

16A,60V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingamodernprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance. Features •16A,60V •rDS(ON)=0.047Ω •TemperatureCompensati

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFD16N06LESM

16A,60V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingamodernprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance. Features •16A,60V •rDS(ON)=0.047Ω •TemperatureCompensati

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD16N06LESM

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

RFD16N06SM

16A,60V,0.047Ohm,N-ChannelPowerMOSFET

Description TheseN-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.ThisprocesswhichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

详细参数

  • 型号:

    TW16N06FZ

  • 功能描述:

    TRIAC|600V V(DRM)|16A I(T)RMS|TO-220AA

供应商型号品牌批号封装库存备注价格
AEG
17462
只做原装货值得信赖
询价
AEG
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
询价
AEG
18+
MODULE
2050
公司大量全新原装 正品 随时可以发货
询价
SAMTEC/申泰
2308+
222464
一级代理,原装正品,公司现货!
询价
SAMTEC/申泰
2021
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
SAMTEC
424
全新原装 货期两周
询价
23+
N/A
58300
一级代理放心采购
询价
FERYSTER
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
SAMTEC
2021+
NA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
TWGMC(台湾迪嘉)
23+
SOT23
6000
诚信服务,绝对原装原盘
询价
更多TW16N06FZ供应商 更新时间2024-6-20 14:00:00