MOSFETs Silicon Carbide N-Channel MOS

Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 140 m Ω (typ.) (5) Less susceptible to malfunction due to high threshold voltage

文件：518.169 Kbytes 页数：10 Pages

TOSHIBA

东芝

MOSFETs Silicon Carbide N-Channel MOS

Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 140 m Ω (typ.) (5) Less susceptible to malfunction due to high threshold voltage

文件：518.169 Kbytes 页数：10 Pages

TOSHIBA

东芝

Power SiC MOSFETs

Application ScopeSwitching regulators\nPolarityN-ch\nRoHS Compatible Product(s) (#)Available

Toshiba

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QFP128

TWCHWELL

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TQFP-128

TECHWELL

上传：深圳市煦洪科技有限公司