MOSFETs Silicon Carbide N-Channel MOS

Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 48 m Ω (typ.) (5) Less susceptible to malfunction due to high threshold voltage:

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MOSFETs Silicon Carbide N-Channel MOS

Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 48 m Ω (typ.) (5) Less susceptible to malfunction due to high threshold voltage:

文件：521.419 Kbytes 页数：10 Pages

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Power SiC MOSFETs

Application ScopeSwitching regulators\nPolarityN-ch\nRoHS Compatible Product(s) (#)Available

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TW
QFP

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TW
QFP

TW

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