ADC229

1W,HighIsolationSIP,Single&DualOutputDC/DCConverters

MPSIndustriesADC2001WDC/DCsarespeciallydesignedtoprovidehighlevelsofisolation3000VDCinaminiatureSIPpackage. Theseriesconsistsof27modelswithinputvoltagesof5V,12Vand24VDCwhichoffersstandardoutputvoltagesof3.3V,5V,9V,12V,15V,±5V,±9V,±12Vand±15VDCfora

ADE229

CompliantwithEuropeanstandardsEuropeanstandardspowerrelays

ADE229

CompliantwithEuropeanstandards1a1b10A/8Apolarizedpowerrelays

FEATURES •ConformstoEuropeansafetystandards(VDE0700andVDE0631) Insulatingdistancebetweencoilandcontacts: ClearanceMin.8mm.315inch CreepagedistanceMin.8mm.315inch •Extensiveproductline-up •Surgevoltagebetweencontactandcoil12kV •Lowoperatingpo

ADE229

CompliantwithEuropeanstandards1a1b10A/8Apolarizedpowerrelays

FEATURES •ConformstoEuropeansafetystandards(VDE0700andVDE0631) Insulatingdistancebetweencoilandcontacts: ClearanceMin.8mm.315inch CreepagedistanceMin.8mm.315inch •Extensiveproductline-up •Surgevoltagebetweencontactandcoil12kV •Lowoperatingpo

AIMB-229

AMDV-seriesmini-ITXwith2HDMI/2DP/8USB/6COM/2Gb/2M.2

Features ƒSupportAMDV2000processor ƒTwo260-pinSO-DIMMupto64GBDDR43200SDRAM ƒSupportmultidisplay,Maxupto4displays ƒSupports1PCIex8,1E-Key2230M.2slot,1M-Key2242/2280M.2slot ƒ6COM,4USB3.2Gen2,2USB3.2Gen1,2USB2.0,2SATA,16bitGPIO ƒSupportSUSI,WIS

AXP229

AdvancedPMUforMulti-coreApplicationProcessorsintegratedHigh-AccuracyGasGaugeandFlashCharger

BD229

iscSiliconPNPPowerTransistor

DESCRIPTION •DCCurrentGain-:hFE=40(Min)@IC=-0.15A •ComplementtoTypeBD226/228/230 APPLICATIONS •Designedforuseindriverstagesintelevisioncircuits.

BD229

PNPpowertransistors

DESCRIPTION PNPpowertransistorinaTO-126;SOT32plasticpackage.NPNcomplements:BD226,BD228andBD230. FEATURES •Highcurrent(max.1.5A) •Lowvoltage(max.80V). ​​​​​​​ APPLICATIONS •Driverstagesintelevisioncircuits.

BD229

SiliconPNPPowerTransistor

DESCRIPTION •DCCurrentGain-:hFE=40(Min)@IC=-0.15A •ComplementtoTypeBD226/228/230 APPLICATIONS •Designedforuseindriverstagesintelevisioncircuits.

BSS229

SIPMOSSmall-SignalTransistor

SIPMOS®Small-SignalTransistor ●VDS250V ●ID0.07A ●RDS(on)100Ω ●Nchannel ●Depletionmode ●Highdynamicresistance ●AvailablegroupedinVGS(th)