丝印：3B；Package：PW-Mini；Bipolar Transistors Silicon NPN Epitaxial Type

Applications • High-Speed Switching • DC-DC Converters Features (1) High DC current gain: hFE = 400 to 1000 (VCE = 2 V, IC = 0.1 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.12 V (max) (IC = 0.3 A, IB = 6 mA) (3) High-speed switching: tf = 180 ns (typ.) (IC = 0.3 A)

文件：470.46 Kbytes 页数：7 Pages

TOSHIBA

东芝

Power transistor for high-speed switching applications

Application Scope：High-speed switching / DC/DC converters\n\nFeatures：Low Satulation Voltage\n\nPolarity：NPN\n\nRoHS Compatible Product(s) (#)：Available

Toshiba

东芝

STEPPER-MOTOR TRANSLATORS AND DRIVERS

文件：3.72874 Mbytes 页数：164 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

BiMOS II 10-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS WITH ACTIVE-DMOS PULL-DOWNS

The UCN5810AF, UCN5810EPF, and UCN5810LWF combine a 10-bit CMOS shift register and accompanying data latches, control circuitry, bipolar sourcing outputs with DMOS active pull-downs. Designed primarily to drive vacuum-fluorescent displays, the 60 V and -40 mA output ratings also allow these device

文件：158.63 Kbytes 页数：8 Pages

ALLEGRO

PACKAGE INFORMATION

文件：1.20249 Mbytes 页数：42 Pages

ETCList of Unclassifed Manufacturers

未分类制造商