丝印：A1452B；Package：TO-220SIS；Bipolar Transistors Silicon PNP Epitaxial Type

Applications • High-Current Switching Features (1) Low collector-emitter saturation voltage: VCE(sat) = -0.4 V (max) (IC = -6 A , IB = -0.3 A) (2) High speed switching: tstg = 1 μs (typ.) (3) Complementary to TTC3710B

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TOSHIBA

东芝

isc Silicon PNP Power Transistor

文件：346.62 Kbytes 页数：2 Pages

ISC

无锡固电

Power transistor for high-speed switching applications

Feature：Low saturation voltage\nApplication Scope：High current switching\nPolarity：PNP\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Collector Current IC -12 A \nCollector Current ICP -15 A \nCollector power dissipation PC 30 W \nCollector power dissipation PC 2 W \nCollector-Base Voltage VCBO -80 V \nCollector-emitter voltage VCEO -80 V ;

Toshiba

东芝

Package：TO-220-3 整包；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage