Power transistor for high-speed switching applications

Feature：High hFE\nApplication Scope：Audio drivers\nPolarity：PNP\nComplementary Product：TTC004B\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Collector Current IC -1.5 A \nCollector Current ICP -2.5 A \nCollector power dissipation PC 10 W \nCollector power dissipation PC 1.5 W \nCollector-Base Voltage VCBO -160 V \nCollector-emitter voltage VCEO -160 V ;

Toshiba

东芝

丝印：A004B；Package：TO-126N；Bipolar Transistors Silicon PNP Epitaxial Type

文件：189.57 Kbytes 页数：7 Pages

TOSHIBA

东芝

Package：TO-225AA，TO-126-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 160V 1.5A TO126N

Toshiba Semiconductor and Storage

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Bipolar Transistors Silicon NPN Epitaxial Type

(1) High collector voltage: VCEO = 160 V (min) (2) Complementary to TTA004B (3) Small collector output capacitance: C ob= 12 pF (typ.) (4) High transition frequency: fT = 100 MHz (typ.)

文件：210.53 Kbytes 页数：7 Pages

TOSHIBA

东芝

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI TVU004 is Designed for Television Band IV & V Applications up to 860 MHz. FEATURES: • Common Emitter • PG = 8.5 dB at 4.0 W/860 MHz • Omnigold™ Metalization System

文件：18.64 Kbytes 页数：1 Pages

ASI