丝印：TT050U065FB；Package：TO-3PH；N-CHANNEL IGBT

APPLICATIONS Power factor corrector (PFC) Energy Storage FEATURES Low gate charge Trench FS Technology, RoHS product Fast switching speed Low switching losses VCE(sat) with positive temperature coefficient

文件：1.13011 Mbytes 页数：10 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：TT050U065FB；Package：TO-247；N-CHANNEL IGBT

APPLICATIONS Power factor corrector (PFC) Energy Storage FEATURES Low gate charge Trench FS Technology, RoHS product Fast switching speed Low switching losses VCE(sat) with positive temperature coefficient

文件：1.13011 Mbytes 页数：10 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：TT050U065FBC；Package：TO-247；N-CHANNEL IGBT

APPLICATIONS  Charging pile  UPS  Solar converters  Energy Storage FEATURES Low gate charge Trench FS Technology RoHS product Fast switching speed Low switching losses VCE(sat) with positive temperature coefficient Built in SiC SBD

文件：981.64 Kbytes 页数：10 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：TT050U065FB；Package：TO-3PH；N-CHANNEL IGBT

APPLICATIONS Power factor corrector (PFC) Energy Storage FEATURES Low gate charge Trench FS Technology, RoHS product Fast switching speed Low switching losses VCE(sat) with positive temperature coefficient

文件：1.13011 Mbytes 页数：10 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：TT050U065FB；Package：TO-247；N-CHANNEL IGBT

APPLICATIONS Power factor corrector (PFC) Energy Storage FEATURES Low gate charge Trench FS Technology, RoHS product Fast switching speed Low switching losses VCE(sat) with positive temperature coefficient

文件：1.13011 Mbytes 页数：10 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：TT050U065FBC；Package：TO-247；N-CHANNEL IGBT

APPLICATIONS  Charging pile  UPS  Solar converters  Energy Storage FEATURES Low gate charge Trench FS Technology RoHS product Fast switching speed Low switching losses VCE(sat) with positive temperature coefficient Built in SiC SBD

文件：981.64 Kbytes 页数：10 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

N-CHANNEL IGBT

APPLICATIONS Power factor corrector (PFC) Energy Storage FEATURES Low gate charge Trench FS Technology, RoHS product Fast switching speed Low switching losses VCE(sat) with positive temperature coefficient

文件：1.13011 Mbytes 页数：10 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

N-CHANNEL IGBT

APPLICATIONS  Charging pile  UPS  Solar converters  Energy Storage FEATURES Low gate charge Trench FS Technology RoHS product Fast switching speed Low switching losses VCE(sat) with positive temperature coefficient Built in SiC SBD

文件：981.64 Kbytes 页数：10 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

N-CHANNEL IGBT

APPLICATIONS  Charging pile  UPS  Solar converters  Energy Storage FEATURES Low gate charge Trench FS Technology RoHS product Fast switching speed Low switching losses VCE(sat) with positive temperature coefficient Built in SiC SBD

文件：981.64 Kbytes 页数：10 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司