High bandwidth (20 MHz) low offset (200 μV) rail-to-rail 5 V Op Amp

Features • Gain bandwidth product 20 MHz, unity gain stable • Low input offset voltage: 50 μV typ., 200 μV max. • Low input bias current: 2 pA typ. • Low noise: 7 nV/√Hz • Slew rate: 13 V/μs • Wide supply voltage range: 2.0 V to 5.5 V • Rail-to-rail input and output • 4 kV HBM ESD toleranc

文件：3.91946 Mbytes 页数：32 Pages

STMICROELECTRONICS

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高带宽（20 MHz）低失调（200 μV）轨到轨5V运算放大器

TSV772是双20 MHz带宽单位增益稳定放大器。轨到轨输入级和13 V/µs的转换速率使TSV772成为低侧电流测量的理想选择。200 µV的最大输入电压提供高精度，允许精确放大小振幅输入信号。\n\n TSV772可以在2.0 V - 5.5 V的单电源供电下运行；完全特征化的输出电容可达47 pF，也可轻松用作A/D转换器输入缓冲区。 • 增益带宽积20 MHz，单位增益稳定 \n• 低输入偏移电压：典型值为50 µV，最大值为200 µV。 \n• 低输入偏置电流：2 pA（典型值）。 \n• 低噪音：7 nV/√Hz \n• 电压转换率：13 V/µs \n• 宽电源电压范围：2.0 V至5.5 V• 轨到轨输入和输出 \n• 4 kV HBM ESD容差 \n• 输入共模范围包括低轨 \n• 更宽的温度范围：-40°C 至 +125 °C \n• 可提供汽车级版本 \n• 优势：测量精度几乎不受噪声或输入偏置电流的影响高频信号调节;

ST

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QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H-BRIDGE CONFIGURATIONS

DESCRIPTION The VN771 is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two Power MOSFETs. The double high side are made using STMicroelectronics VIPower technology; Power MOSFETs are made by using the new advanced strip lay-out technology Thi

文件：87.03 Kbytes 页数：10 Pages

STMICROELECTRONICS

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Quad smart power solid state relay for complete H-bridge configurations

Description The VN771K is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two low side switches. Both the double high side and low side switches are made using STMicroelectronics VIPower™ M0-3 Technology. This device is suitable to drive a DC

文件：901.84 Kbytes 页数：33 Pages

STMICROELECTRONICS

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QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS

DESCRIPTION The VN771K-E is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two low side switches. Both the double high side and low side switches are made using |STMicroelectronics VIPower™ M0-3 Technology. This device is suitable to drive a D

文件：225.63 Kbytes 页数：21 Pages

STMICROELECTRONICS

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