首页 >TSV358YDT>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SinglePowerSupplyDualOperationalAmplifiers FEATURES -InputOffsetVoltage -InputOffsetCurrent -LargeSignalVoltageGain -InternalFrequencyCompensation -OutputShort-CircuitProtection | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES •Internallyfrequencycompensation •WideoutputvoltageswingV–toV+–1.5V •CommonmodeinputvoltagerangeincludesV– •Widesupplyvoltagerange 3Vto30V(Single) ±1.5Vto±15V(Split) •Outputshortcircuitprotection | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
LOWPOWERDUALOPERATIONALAMPLIFIERS SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES •Internallyfrequencycompensation •WideoutputvoltageswingV–toV+–1.5V •CommonmodeinputvoltagerangeincludesV– •Widesupplyvoltagerange 3Vto30V(Single) ±1.5Vto±15V(Split) •Outputshortcircuitprotection | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
LOWPOWERDUALOPERATIONALAMPLIFIERS SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
LOWPOWERDUALOPERATIONALAMPLIFIERS SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
BipolarAnalogIntegratedCircuit Features •ThepackageiscompliantwithaJEDECstandard(MS-012). •Thermalresistancewasimprovedmorethan30fromexistingμPC358G2byadoptingcopper-basedleadmaterial. (Rth(j-a)=156°C/W) •WiderOperatingAmbientTemperaturerangethanμPC358G2 ⎯μPC358MF-DAA(TA=−40to+85°C | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
DUALOPERATIONALAMPLIFIERS FEATURES *Internallyfrequencycompensatedforunitygain *LargeDCvoltagegain:100dB *Wideoperatingsupplyrange(Vcc=3V~32V) *Inputcommonmode voltageincludesground *Largeoutputvoltageswing:From0VtoVcc1.5V *Powerdrainsuitableforbatteryoperation | Youwang 友旺杭州友旺电子有限公司 | Youwang | ||
DUALOPERATIONALAMPLIFIERS FEATURES *Internallyfrequencycompensatedforunitygain *LargeDCvoltagegain:100dB *Wideoperatingsupplyrange(Vcc=3V~32V) *Inputcommonmode voltageincludesground *Largeoutputvoltageswing:From0VtoVcc1.5V *Powerdrainsuitableforbatteryoperation | Youwang 友旺杭州友旺电子有限公司 | Youwang | ||
DUALOPERATIONALAMPLIFIERS FEATURES *Internallyfrequencycompensatedforunitygain *LargeDCvoltagegain:100dB *Wideoperatingsupplyrange(Vcc=3V~32V) *Inputcommonmode voltageincludesground *Largeoutputvoltageswing:From0VtoVcc1.5V *Powerdrainsuitableforbatteryoperation | Youwang 友旺杭州友旺电子有限公司 | Youwang |
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