Infrared Emitting Diode, 950 nm, GaAs

Package type: leaded\n Package form: T-1¾\n Dimensions (in mm): Ø 5\n\n ;

Vishay

威世

Infrared Emitting Diode, 950 nm, GaAs

文件：109.01 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Package：径向；类别：光电器件 LED 发射器 - 红外，紫外，可见光 描述：EMITTER IR 950NM 150MA RADIAL

Vishay Semiconductor Opto Division

PIN DIODE

DESCRIPTION These series of PIN diodes are designed for applications requiring small package size and moderate average power handling capability. The low capacitance of the UM6000 and UM6600 allows them to be used as series switching elements to 1 GHz. The low resistance of the UM6200 is useful

文件：221.09 Kbytes 页数：4 Pages

Microsemi

美高森美

Product Change Notification

文件：2.81601 Mbytes 页数：221 Pages

Microchip

微芯科技

Product Change Notification

文件：2.81601 Mbytes 页数：221 Pages

Microchip

微芯科技