Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

DESCRIPTION TSTA7300 is an infrared, 875 nm emitting diode in GaAlAs technology in a hermetically sealed TO-18 package with lens. FEATURES • Package type: leaded • Package form: TO-18 • Dimensions (in mm): ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power •

文件：143.89 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

DESCRIPTION TSTS7300 is an infrared, 950 nm emitting diode in GaAs technology in a hermetically sealed TO-18 package with lens. FEATURES • Package type: leaded • Package form: TO-18 • Dimensions (in mm): ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • Hi

文件：139.66 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

VISHAY/威世
TO18

VISHAY/威世

上传：深圳市恒达亿科技有限公司

TST嘉硕TAISAW

TST嘉硕TAISAW

上传：深圳市光与电子有限公司

NS/国半
QFP

NS/国半

上传：深圳市汇莱威科技有限公司