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TSML1030

HighPowerInfraredEmittingDiode,RoHSCompliant,940nm,GaAlAs/GaAs

VishayVishay Siliconix

威世科技威世科技半导体

TSML1030

HighPowerInfraredEmittingDiode,RoHSCompliant,940nm,GaAlAs/GaAs

DESCRIPTION TSML1000isaninfrared,940nmemittingdiodeinGaAlAsmultiquantumwell(MQW)technologywithhighradiantpowerandhighspeedmoldedinaclear,untintedplasticpackage(withlens)forsurfacemounting(SMD). FEATURES •Packagetype:surfacemount •Packageform:GW,RGW,yo

VishayVishay Siliconix

威世科技威世科技半导体

TSML1030

HighPowerInfraredEmittingDiode,950nm,GaAlAs/GaAs

VishayVishay Siliconix

威世科技威世科技半导体

TSML1030

ExtentedPowerIREmittingDiodeinSMDPackage

DESCRIPTION TSML1000isaninfrared,940nmemittingdiodeinGaAlAsmultiquantumwell(MQW)technologywithhighradiantpowerandhighspeedmoldedinaclear,untintedplasticpackage(withlens)forsurfacemounting(SMD). FEATURES •Packagetype:surfacemount •Packageform:GW,RGW,yo

VishayVishay Siliconix

威世科技威世科技半导体

TSML1030

HighPowerInfraredEmittingDiode

VishayVishay Siliconix

威世科技威世科技半导体

TSML1030

HighPowerInfraredEmittingDiode,940nm,GaAlAs,MQW

VishayVishay Siliconix

威世科技威世科技半导体

TSML1030

HighPowerInfraredEmittingDiode,940nm,GaAlAs,MQW

DESCRIPTION TSML1000isaninfrared,940nmemittingdiodeinGaAlAs multiquantumwell(MQW)technologywithhighradiant powerandhighspeedmoldedinaclear,untintedplastic package(withlens)forsurfacemounting(SMD). FEATURES •Packagetype:surface-mount •Packageform:GW,RG

VishayVishay Siliconix

威世科技威世科技半导体

TZ1030A

SMD5.0x3.238.88MHzCrystalUnit

Features: SurfaceMountSeamWeldPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature DescriptionandApplications: Surfacemount5.0mmx3.2mmcrystalunitforuseinwirelesstelecommunicationsdevices.

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

U1030G

10.0AmpereSurfaceMountDualCommonCathodeUltraFastRecoveryRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

U1030RG

10.0AmpereSurfaceMountDualCommonAnodeUltraFastRecoveryRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

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