ADV7401

10-Bit,Integrated,MultiformatSDTV/HDTVVideoDecoderandRGBGraphicsDigitizer

AK7401

RotaryPositionSensorIC

AM7401

SINGLEP-CHANNEL

DESCRIPTION AM7401istheP-Channelenhancementmodepower fieldeffecttransistorsareusingtrenchDMOS technology.Thisadvancedtechnologyhasbeen especiallytailoredtominimizeon-stateresistance, providesuperior,fastswitchingperformance,and withstandhighenergypulseintheav

AM7401P

P-Channel150-V(D-S)MOSFET

ANX7401

USBPowerDeliveryPHYwithChannelConfigurationControl

Features
On-chipMicrocontroller(OCM)toimplementUSBPDmessagingandDisplayPortrelatedfunctions
DisplayPortAlternateModecommunicationsupportthroughUSB-PDstructuredVDM messaging
5V-tolerantCC/VCONNsignals
Deadbatterydetectionsupport
I2Cslavemodetosupportexter

ANX7401

USBPowerDeliveryPHYwithChannelConfigurationControl

Features
On-chipMicrocontroller(OCM)toimplementcabledetectionandUSB-PDmessagingforchargingrelatedfunctions
5V-tolerantCC/VCONNsignals
Deadbatterydetectionsupport
I2CslavemodetosupportexternalMCU/IC
VBUScontrolandUSB_IDpinstocontrolexternalswitch,Powe

ANX7401

USBType-C™CrosspointSwitch

Features
High-speedswitchingupto6.75Gbps
USB3.1signal(SSTXandSSRX)withGen1(5Gbps)linkspeed
On-chipMicrocontroller(OCM)toimplementsignalswitching,USB-PDmessaging,andrelatedfunctions
5V-tolerantCC/VCONNsignals
Deadbatterydetectionsupport
I2Cslavemode

ANX7401

USBType-C™CrosspointSwitch

Features
High-speedswitchingupto6.75Gbps
4-lanesDisplayPortinputswithlinkspeedof1.62Gbps,2.7Gbps,5.4Gbps,and6.75Gbps
USB3.1signal(SSTXandSSRX)withGen1(5Gbps)linkspeed
DisplayPortAlternateMode(SlimPort®)communicationsupportthroughUSB-PDstructuredVDMmes

ANX7401

10GActiveMux(1x2)withIntegratedRe-timerforUSB3.1

Features
Built-inre-timer -Integratedre-timerforUSB3.1uptoGen2@10Gbps -Losscompensationtorecoverupto23dBchannelloss
Integratedmux -Digital(1x2)muxswitchesUSBsignalsandpreservesenhancedsignaloutputoverUSB-Cconnector -MuxcontrolinputthroughI2Ccomma

AO7401

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO7401usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge,andoperationwithgatevoltagesaslowas2.5V,inthesmallSOT363footprint.Itcanbeusedforawidevarietyofapplications,includingloadswitching,lowcurrentinvertersandlow