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6N50

6A,500VN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友顺友顺科技股份有限公司

6N50

6Amps,500VoltsN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友顺友顺科技股份有限公司

6N50

FastSwitchingSpeed

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOD6N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOD6N50

500V,5.3AN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

FDD6N50

N-ChannelUniFETTMMOSFET500V,6A,900m廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6N50

500VN-ChannelMOSFET

Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6N50F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=5.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDD6N50F

N-ChannelMOSFET500V,5.5A,1.15廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFailchild’sproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6N50FTF

N-ChannelMOSFET500V,5.5A,1.15廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFailchild’sproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

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