Dual N-Channel 60 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg and UIS tested

文件：2.1542 Mbytes 页数：9 Pages

VBSEMI

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60V Dual N-Channel MOSFET

文件：247.86 Kbytes 页数：6 Pages

TSC

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Rotary code switches

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Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：1.09215 Mbytes 页数：9 Pages

VBSEMI

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VHB Tape - Specialty Tapes

文件：735.51 Kbytes 页数：9 Pages

3M

N-Channel Enhancement Mode Power MOSFET

Description The 4946 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● High power and current handing capability ● Lead

文件：3.53276 Mbytes 页数：5 Pages

TUOFENG

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