SE3455

InfraredSensorsLineGuide

SE3455

GaAsInfraredEmittingDiode

DESCRIPTION TheSE3455/5455seriesconsistsofagalliumarsenideinfraredemittingdiodemountedinaTO-46metalcanpackage.TheSE3455serieshasflatwindowcansprovidingawidebeamangle,whiletheSE5455serieshasglasslensedcansprovidinganarrowbeamangle.Thesedevicesareconstr

SI3455ADV

P-Channel30-V(D-S)MOSFET

SI3455DV

P-Channel30-V(D-S)MOSFET

SI3455DV

SingleP-ChannelLogicLevelPowerTrenchMOSFET

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchild’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–3.6A,–30V. RDS(ON)=75mΩ@VGS=–10V RDS(ON)=125mΩ@VGS=–4.5V •Lowgatecharge

STT3455

P-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET APPLICATIONS •LoadSwitch

STT3455

P-ChannelEnhancementModePowerMos.FET

TZ3455A

CrystalUnitSMD1.6x1.250MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage MoistureSensitivityLevel(MSL):Level-1 DescriptionandApplications: Surfacemount1.6mmx1.2mmcrystalunitforuseinwireless

TZ3455B

CrystalUnitSMD1.6x1.250MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage MoistureSensitivityLevel(MSL):Level-1 DescriptionandApplications: Surfacemount1.6mmx1.2mmcrystalunitforuseinwireless