2N7000

N-channel60V-1.8廓-0.35A-SOT23-3L/TO-92STripFET??PowerMOSFET

2N7000

N-ChannelEnhancement-ModeVerticalDMOSFETs

2N7000

N-CHANNEL-ENHANCEMENT

2N7000

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

2N7000

N-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription TheSupertex2N7000isanenhancement-mode(normally-off)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

2N7000

CASE29-04,STYLE22TO-92(TO-226AA)

2N7000

SmallSignalMOSFET200mAmps,60VoltsN-ChannelTO-92

SmallSignalMOSFET200mAmps,60Volts N−ChannelTO−92 Features •Pb−FreePackagesareAvailable*

2N7000

N-ChannelEnhancementModeFieldEffectTransistor

2N7000

LogicN-ChannelMOSFET

GeneralDescription ThisPowerMOSFETisproducedusingplanarDMOStechnology.AndthisPowerMOSFETiswellsuitedforBatteryswitch,Loadswitch,Motorcontrollerandothersmallsignalswitches. Features ■RDS(on)(Max5Ω)@VGS=10V RDS(on)(Max5.3Ω)@VGS=4.5V ■GateCharge(Typical

2N7000

DMOSTransistors(N-Channel)