首页 >TSM2313CXRFG>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HighCurrentToroidInductors | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
HighCurrentToroidInductorsHorizontalorverticalmount | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
HighCurrentToroidInductors | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
HighCurrentToroidInductors | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
HighCurrentToroidInductors | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
MOSFETP-CHANNELENHANCEMENTMODE DESCRIPTION TheAM2313isavailableinSOT-23Spackage. FEATURES -18V/3A, RDS(ON)=120mΩ(MAX)@VGS=-4.5V. RDS(ON)=150mΩ(MAX)@VGS=-2.5V. SuperHighdensecelldesignforextremelylowRDS(ON). ReliableandRugged. AvailableinSOT-23SPackage APPLICATION PowerManag | AITSEMIAiT Semiconductor Inc. 创瑞科技AiT创瑞科技 | AITSEMI | ||
P-ChannelLogicLevelMOSFET TheseminiaturesurfacemountMOSFETsutilizeHighCellDensityprocess.LowrDS(on)assuresminimalpowerlossandconservesenergy,makingthisdeviceidealforuseinpowermanagementcircuitry.Typicalapplicationsarevoltagecontrolsmallsignalswitch,powermanagementinportableandbatte | AnalogPower Analog Power | AnalogPower | ||
SimpleDriveRequirement,SmallPackageOutline | A-POWERAdvanced Power Electronics Corp. 富鼎先进电子富鼎先进电子股份有限公司 | A-POWER | ||
P-ChannelEnhancementModeMOSFET Features •-20V/-1.8A,RDS(ON)=108mΩ(typ.)@VGS=-4.5V RDS(ON)=135mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesignforExtremely LowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquip | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
P-ChannelEnhancementModeMOSFET Features •-20V/-1.8A,RDS(ON)=108mΩ(typ.)@VGS=-4.5V RDS(ON)=135mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesignforExtremely LowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquip | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC |
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