N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.17854 Mbytes 页数：9 Pages

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微碧半导体

600V N-Channel Power MOSFET

文件：311.14 Kbytes 页数：7 Pages

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台湾半导体

600V N-Channel Power MOSFET

文件：371.46 Kbytes 页数：6 Pages

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台湾半导体

N-Channel Power Enhancement Mode MOSFET

General Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstandhigh energy in avalanche and commutation modes. The new energy e

文件：166.25 Kbytes 页数：4 Pages

TSC

台湾半导体

600V N-Channel Power MOSFET

文件：371.46 Kbytes 页数：6 Pages

TSC

台湾半导体