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1N45

GOLDBONDEDGERMANIUMDIODE

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MTD1N45

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=1A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTP1N45

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=450V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SSM1N45B

450VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SSN1N45B

450VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SSN1N45BTA

N-ChannelB-FET450V,0.5A,4.25廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

TSM1N45

450VN-ChannelPowerMOSFET

GeneralDescription TheTSM1N45isN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingplanarDMOStechnologyprocess.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigherenerg

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSM1N45CT

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

TSM1N45CWRP

450VN-ChannelPowerMOSFET

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSM1N45D

450VN-ChannelPowerMOSFET

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

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