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BRD15P06

P-CHANNELMOSFETinaTO-252PlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

MTE15P06FP

P-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

NP15P06SLG

MOSFIELDEFFECTTRANSISTOR

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NP15P06SLG

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-15A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=70mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PJD15P06A

60VP-ChannelEnhancementModeMOSFET

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PJD15P06A-AU

60VP-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@-10V,ID@-7.5A

PANJITPan Jit International Inc.

強茂強茂股份有限公司

R15P06S

1WattSIP7SingleOutputforGaNApplication

RECOM

Recom International Power

RFD15P06

15A,60V,0.150Ohm,P-ChannelPowerMOSFETs

TheseP-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.ThisprocesswhichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

Intersil

Intersil Corporation

RFD15P06SM

15A,60V,0.150Ohm,P-ChannelPowerMOSFETs

TheseP-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.ThisprocesswhichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

Intersil

Intersil Corporation

RFD15P06SM

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-15A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=-10V DESCRIPTION ·Switchingregulators,Switchingconverters, Motordrivers,andRelaydrivers

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

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