High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero

DESCRIPTION TSHG6410 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: p = 8

文件：112.89 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

DESCRIPTION TSFF6410 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 8

文件：104.29 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

DESCRIPTION TSHF6410 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm):  5 • Peak wavelength: p = 8

文件：113.17 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

TUNDRA
BGA

TUNDRA

上传：深圳市汇莱威科技有限公司

TUNDRA
BGA

TUNDRA

上传：深圳市宇创芯科技有限公司