High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

DESCRIPTION TSHF5210 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off •

文件：108.46 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero

DESCRIPTION TSHG5210 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off •

文件：107.1 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

DESCRIPTION TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1 3/4 • Dimensions (in mm): Ø 5 • Leads with stand-off

文件：112.55 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

BGA

TUNDRA

上传：深圳市宇创芯科技有限公司

BGA

TUNDRA

上传：富凯科技(深圳）有限公司