Infrared Emitting Diode, 875 nm, GaAlAs

DESCRIPTION The TSHA440. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): Ø 3 • Peak wavelength: p = 875 nm • High reliability • Angle of half intens

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VishayVishay Siliconix

威世科技

High Intensity LED in Ø 3 mm Tinted Diffused Package

DESCRIPTION These devices have been designed to meet the increasing demand for AlInGaP technology general indicating and lighting purposes. They are housed in a 3 mm diffused plastic package. The wide viewing angle of these devices provides a high brightness. All packing units are categoriz

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VishayVishay Siliconix

威世科技

Universal LED in Ø 3 mm Tinted Diffused Package

FEATURES • For DC and pulse operation • Luminous intensity categorized • Standard Ø 3 mm (T-1) package • ESD-withstand voltage: up to 2 kV according to JESD22-A114-B • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

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VishayVishay Siliconix

威世科技

TUNDRA
BGA

TUNDRA

上传：深圳市汇莱威科技有限公司

TUNDRA
BGA

TUNDRA

上传：深圳市宇创芯科技有限公司