Planar MOSFET

Truesemi

信安半导体

650V TRENCH GATE FIELD-STOP IGBT

 DESCRIPTION The UTC UTG20N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG20N65-S is suitable for the resonant or soft switching

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UTC

友顺

20A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC20N65 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand

文件：133.81 Kbytes 页数：3 Pages

UTC

友顺

20A N-Channel Power MOSFET

Features ● RDS(ON) = 0.35Ω ● Ultra low gate charge ( Typical 150 nC ) ● Low reverse transfer capacitance ( CRSS = typical 36 pF ) ● Fast switching capability ● Avalanche energy specified ● Improved dv/dt capability, high ruggedness Application ● Power factor correction（PFC） ● Switched m

文件：1.69493 Mbytes 页数：6 Pages

SY

顺烨电子

20A 650V N-channel enhancement mode field effect transistor

文件：891.65 Kbytes 页数：6 Pages

YFWDIODE

佑风微