首页 >TSD40N50DV>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
500VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
500VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.11Ω(Max)@VGS=10V APPLICATIONS ·SwitchedModePowerSupplies ·FPC ·ElectronicLampBallasts | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET(Vdss=500V,Rds(on)typ.=0.087ohm,Id=46A) Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dt Ruggedness ●FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ●LowTrrandSoftDiodeRecovery ●HighPerformanceOptimisedAnti-parallelDiode Applications | IRF International Rectifier | IRF | ||
PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedfor ExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDrive Requirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoise Immunity •Compliant | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HEXFET짰PowerMOSFET | IRF International Rectifier | IRF | ||
PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedfor ExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDrive Requirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoise Immunity •Compliant | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
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