首页 >TSD3080DV>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
30AMPULTRAFASTRECOVERYRECTIFIER
| MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
MicroUSBReceptacle,TYPEB,SMT,R/A,BottomMount,OptionalPeg,WithShellStakes | GCT Global Connector Technology | GCT | ||
TRANSCEIVERSWITHESD-PROTECTED | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
DualTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s, perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DualTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
TrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DualTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DualTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
TrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
TrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
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