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IXFC16N80P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFC16N80P

PolarHVHiPerFETPowerMOSFETISOPLUS220

N-ChannelEnhancementMode FastIntrinsicDiode AvalancheRated Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFH16N80P

PolarHVPowerMOSFET

N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features FastRecoverydiode UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings

IXYS

IXYS Corporation

IXFH16N80P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFT16N80P

PolarHVPowerMOSFET

N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features FastRecoverydiode UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings

IXYS

IXYS Corporation

IXFV16N80P

PolarHVPowerMOSFET

N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features FastRecoverydiode UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings

IXYS

IXYS Corporation

IXFV16N80PS

PolarHVPowerMOSFET

N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features FastRecoverydiode UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings

IXYS

IXYS Corporation

MTY16N80E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTY16N80E

TMOSPOWERFET16AMPERES800VOLTSRDS(on)=0.50OHM

TMOSE−FETPowerFieldEffectTransistor N−ChannelEnhancement−ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

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