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博众电气

Bipolar Transistors Silicon PNP Epitaxial Type

Applications • Power Amplifiers • Power Switching Features (1) Low collector saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA) (2) High-speed switching : tstg = 300 ns (typ.) (IC = -1 A)

文件：214.14 Kbytes 页数：7 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Epitaxial Type

○ Power Amplifier Applications ○ Power Switching Applications • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)（ IC = 1A） • High-speed switching: tstg = 0.4 μs (typ.)

文件：178.32 Kbytes 页数：5 Pages

TOSHIBA

东芝

SINGLE PHASE 1.0AMPBRIDGE RECTIFIERS

VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES * Ideal for printed circuit board * Low forward voltage * Polarity: marked on body * Mounting position:Any * Weight: 1.20 grams * Low leakage current * Both normal and Pb free product areavailable: * Normal: 80~95Sn, 5~20Pb * Pbf

文件：30.75 Kbytes 页数：2 Pages

DGNJDZ

南晶电子