首页 >TSC862>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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NPNSiliconRFTwinTransistorwith2DifferentElements FEATURES •Lowvoltageoperation •2differentbuilt-intransistors(2SC5010,2SC5801) Q1:Built-inhighgaintransistor fT=12.0GHzTYP.,⏐S21e⏐2=8.5dBTYP.@VCE=3V,IC=10mA,f=2GHz Q2:Built-inlowphasedistortiontransistorsuitedforOSCoperation fT=4 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPNSILICONRFTWINTRANSISTOR | CEL California Eastern Labs | CEL | ||
NECsNPNSILICONRFTWINTRANSISTOR DESCRIPTION NECsUPA862TDcontainsoneNE851andoneNE685NPNhighfrequencysiliconbipolarchip.TheNE851isanexcellentoscillatorchip,featuringlow1/fnoiseandhighimmunitytopushingeffects.TheNE685isanexcellentbuffertransistor,featuringlownoiseandhighgain.NECsnewult | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
NPNSiliconRFTwinTransistorwith2DifferentElements FEATURES •Lowvoltageoperation •2differentbuilt-intransistors(2SC5010,2SC5801) Q1:Built-inhighgaintransistor fT=12.0GHzTYP.,⏐S21e⏐2=8.5dBTYP.@VCE=3V,IC=10mA,f=2GHz Q2:Built-inlowphasedistortiontransistorsuitedforOSCoperation fT=4 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPNSILICONRFTWINTRANSISTOR NPNSILICONRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINSUPERLEAD-LESSMINIMOLD FEATURES •Lowvoltageoperation •2differentbuilt-intransistors(2SC5435,2SC5800) Q1:Built-inhighgaintransistor fT=12.0GHzTYP.,S21e2=11.0dBTYP.@VCE=3V,IC=10mA,f=2GHz | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
safetyswitchXCSPL-straightlever-torightortoleft-1NC2NO-M16 | SCHNEIDERSchneider Electric 施耐德施耐德电气 | SCHNEIDER | ||
safetyswitchXCSTL-straightlever-torightortoleft-3NC-M16 | SCHNEIDERSchneider Electric 施耐德施耐德电气 | SCHNEIDER | ||
safetyswitchXCSTR-spindle80mm-3NC-M16 | SCHNEIDERSchneider Electric 施耐德施耐德电气 | SCHNEIDER | ||
OPA86212.6-V,Low-Noise,Single-Ended-to-Differential,HighInputImpedanceAmplifier | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
OPA862HighInputImpedance,Single-EndedtoDifferentialADCDriver | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 |
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