首页 >TSC835CPI>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
ASYMMETRICALTHYRISTORTHYRISTORASYMETRIQUE | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
SUPPORTPRODUCTSFORMICROLINEARI.C.S | PMI Premier Magnetics, Inc. | PMI | ||
8ASchottkyRectifier | TAITRON TAITRON Components Incorporated | TAITRON | ||
NPNSILICONEPITAXIALTRANSISTORWITH2DIFFERENTELEMENTSINAFLAT-LEAD6-PINTHIN-TYPEULTRASUPERMINIMOLDPACKAGE DESCRIPTION TheµPA835TChasbuilt-intwodifferenttransistors(Q1andQ2)forlownoiseamplificationintheVHFbandtoUHFband. FEATURES •Lownoise Q1:NF=1.5dBTYP.@f=2GHz,VCE=3V,IC=3mA Q2:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA •Highgain Q | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
NPNSILICONEPITAXIALTRANSISTORWITH2DIFFERENTELEMENTSINAFLAT-LEAD6-PINTHIN-TYPEULTRASUPERMINIMOLDPACKAGE DESCRIPTION TheµPA835TChasbuilt-intwodifferenttransistors(Q1andQ2)forlownoiseamplificationintheVHFbandtoUHFband. FEATURES •Lownoise Q1:NF=1.5dBTYP.@f=2GHz,VCE=3V,IC=3mA Q2:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA •Highgain Q | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
SiliconTransistor NPNSILICONEPITAXIALTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINTHIN-TYPESMALLMINIMOLDPACKAGE | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPNSILICONEPITAXIALTWINTRANSISTOR DESCRIPTION TheUPA835TFhastwodifferentbuilt-intransistorsforlowcostamplifierandoscillatorapplicationsintheVHF/UHFband.Lownoisefigures,highgain,highcurrentcapability,andmediumoutputgivethisdevicehighdynamicrangeandexcellentlinearityfortwo-stageamplifiers.Th | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES •Inputoffsetvoltage±3mVMAX. •Slewrate5.5V/μsTYP. •Unitygainfrequency2.8MHzTYP. •LowpowerICC≤2.2mAMAX. (Reducescircuitcurrentswhilemaintainingrelativelyhighslewrateandbandwidth) •Highstabilityissecuredtocapacitiveloads (4000pF,AV=+1) • | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SCHOTTKYBARRIERRECTIFIER8AMP35VOLT | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
SCHOTTKYBARRIERRECTIFIER8AMP35VOLT SURFACEMOUNT POWERMITE®3SurfaceMountPowerPackage Features •LowProfile–Maximumheightof1.1mm •FootprintAreaof16.51mm •LowVFProvidesHigherEfficiency •Suppliedin16mmTapeandReel–6000units/reel •LowThermalResistancewithDirectThermalPathofDieonExposedCa | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi |
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