首页 >TSC831CPL-NEW>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SUPPORTPRODUCTSFORMICROLINEARI.C.S | PMI Premier Magnetics, Inc. | PMI | ||
MICRO-POWER,CMOSINPUT,RRIO,1.4V,PUSH-PULLOOUTPUTCOMPARATOR | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
NPNSILICONEPITAXIALTRANSISTORWITH2DIFFERENTELEMENTSINAFLAT-LEAD6-PINTHIN-TYPEULTRASUPERMINIMOLDPACKAGE DESCRIPTION TheµPA831TChasbuilt-intwodifferenttransistors(Q1andQ2)forlownoiseamplificationintheVHFbandtoUHFband. FEATURES •Lownoise Q1:NF=1.2dBTYP.,Q2:NF=1.4dBTYP. @f=1GHz,VCE=3V,IC=7mA •Highgain Q1:|S21e|2=9.0dBTYP.,Q2:|S | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
NPNSILICONEPITAXIALTRANSISTORWITH2DIFFERENTELEMENTSINAFLAT-LEAD6-PINTHIN-TYPEULTRASUPERMINIMOLDPACKAGE DESCRIPTION TheµPA831TChasbuilt-intwodifferenttransistors(Q1andQ2)forlownoiseamplificationintheVHFbandtoUHFband. FEATURES •Lownoise Q1:NF=1.2dBTYP.,Q2:NF=1.4dBTYP. @f=1GHz,VCE=3V,IC=7mA •Highgain Q1:|S21e|2=9.0dBTYP.,Q2:|S | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
NPNSILICONEPITAXIALTWINTRANSISTOR | CEL California Eastern Labs | CEL | ||
NPNSILICONRFTWINTRANSISTOR NPNSILICONRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINLEAD-LESSMINIMOLD(M16,1208PACKAGE) FEATURES •2differentbuilt-intransistors(2SC5006,2SC5007) •Lownoise Q1:NF=1.2dBTYP.@VCE=3V,IC=7mA,f=1GHz Q2:NF=1.4dBTYP.@VCE=3V,IC=7mA,f=1GHz | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconTransistor NPNSILICONEPITAXIALTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINTHIN-TYPESMALLMINIMOLDPACKAGE | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPNSILICONEPITAXIALTWINTRANSISTOR DESCRIPTION TheUPA831TFhastwodifferentbuilt-intransistorsforlowcostamplifierandoscillatorapplicationsintheVHF/UHFband.Lownoisefigures,highgain,highcurrentcapability,andmediumoutputgivethisdevicehighdynamicrangewithexcellentlinearityfortwo-stageamplifiers.T | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MINIATUREHIGHPOWERLATCHINGRELAY | EVER-WAY EVER-WAY INDUSTRY COMPANY LIMITED | EVER-WAY | ||
SOT23SILICONVARIABLECAPACITANCEDIODES SOT23SILICONVARIABLECAPACITANCE FEATURES *CloseToleranceC-VCharacteristics *HighTuningRatio *LowIREnablingExcellentPhaseNoisePerformance(IRTypically | Zetex Zetex Semiconductors | Zetex |
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