首页 >TSC6072>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SINGLEPOLE,EIGHTTHROWCOMMERCIALCONNECTORIZEDPLUG-INSWITCHES | MICRONETICS Micronetics, Inc. | MICRONETICS | ||
HeavyDutyRingandSpadeTerminals | HeycoHeyco. 海科 | Heyco | ||
Synchronousrectificationstep-upDC/DCconverterformobilephone | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
WhiteBacklightLEDDriversforSmalltoMediumLCDPanels(SwitchingRegulatorType) | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
BoostDC/DCconverter,AdjustmentofbrightnessbyexternalPWMpulse | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,54A,RDS(ON)=9mW@VGS=10V. RDS(ON)=13mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,50A,RDS(ON)=8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=11mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,12.5A,RDS(ON)=10mW@VGS=10V. RDS(ON)=14mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,50A,RDS(ON)=8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=11mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,45A,RDS(ON)=8.5mW@VGS=10V. RDS(ON)=12mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS |
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