NAND Gates

General Description The 325 and 326 each contain two 2-input gates and two 3-input gates. The active pullup and 5mA output drive current of the 325 allow it to drive moderately long lines with no loss of noise immunity. The 326 has passive pullup resistors on the chip, so that outputs may be coll

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MICROSEMI

美高森美

NAND Gates

Microchip

微芯科技

Flash Programmable System Devices with 8032 Microcontroller Core and 256Kbit SRAM

SUMMARY DESCRIPTION ■ Dual bank Flash memories – Concurrent operation, read from memory while erasing and writing the other. In-Application Programming (IAP) for remote updates – Large 128KByte or 256KByte main Flash memory for application code, operating sys tems, or bit maps for graphic

文件：1.20586 Mbytes 页数：176 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C.

DESCRIPTION The VB325SP is a high voltage power integrated circuit made using the STMicroelectronics VIPower™ M1-3 technology, with vertical current flow power darlington and logic level compatible driving circuit. The enable pin allows to externally block the switch when the input is on. Built

文件：190.17 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

NPN SILICON PLANAR RF TRANSISTOR

FEATURES * High fT, 1.3GHz * Low noise 175mW

文件：52.18 Kbytes 页数：2 Pages

ZETEX