High/low-side, bidirectional, zero-drift current sense amplifiers

Features • Wide common mode voltage: -0.3 to 26 V • Offset voltage: ±35 μV max. (TSC210) • 2.7 to 26 V supply voltage • Different gain available • – TSC210 (200 V/V) – TSC211 (500 V/V) – TSC212 (1000 V/V) – TSC213 (50 V/V) – TSC214 (100 V/V) – TSC215 (75 V/V) • Gain error: ±1% max.

文件：1.78537 Mbytes 页数：38 Pages

STMICROELECTRONICS

意法半导体

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see

文件：100.14 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Wireless Connectivity Edge Intelligence Server

文件：790.6 Kbytes 页数：2 Pages

ADVANTECH

研华科技

INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

1 Features • Updated format to match new TI layout and flow. Tables, figures and cross-references use a new numbering sequence throughout the document. Wide Common-Mode Range: –0.3 V to 26 V • Offset Voltage: ±35 μV (Maximum, INA210) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: –

文件：1.58588 Mbytes 页数：45 Pages

TI

德州仪器

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene

文件：843.37 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世科技