丝印：O131；Package：MiniSO8；100 V, precision, bidirectional current sense amplifier

Features • Wide common-mode voltage: -4 to 100 V • High common-mode rejection CMR: 100 dB min. • Offset voltage: ±150 μV max. • Offset drift: 0.5 μV/°C max. • Enhanced PWM rejection • 2.7 to 5.5 V supply voltage • Internal fixed gain – TSC2020: 20 V/V – TSC2021: 50 V/V – TSC2022: 100 V/V

文件：5.97976 Mbytes 页数：48 Pages

STMICROELECTRONICS

意法半导体

100 V, precision, bidirectional current sense amplifier

Features • Wide common-mode voltage: -4 to 100 V • High common-mode rejection CMR: 100 dB min. • Offset voltage: ±150 μV max. • Offset drift: 0.5 μV/°C max. • Enhanced PWM rejection • 2.7 to 5.5 V supply voltage • Internal fixed gain – TSC2020: 20 V/V – TSC2021: 50 V/V – TSC2022: 100 V/V

文件：5.97976 Mbytes 页数：48 Pages

STMICROELECTRONICS

意法半导体

100 V, precision, bidirectional current sense amplifier

Features • Wide common-mode voltage: -4 to 100 V • High common-mode rejection CMR: 100 dB min. • Offset voltage: ±150 μV max. • Offset drift: 0.5 μV/°C max. • Enhanced PWM rejection • 2.7 to 5.5 V supply voltage • Internal fixed gain – TSC2020: 20 V/V – TSC2021: 50 V/V – TSC2022: 100 V/V

文件：5.97976 Mbytes 页数：48 Pages

STMICROELECTRONICS

意法半导体

100 V, precision, bidirectional current sense amplifier

Features • Wide common-mode voltage: -4 to 100 V • High common-mode rejection CMR: 100 dB min. • Offset voltage: ±150 μV max. • Offset drift: 0.5 μV/°C max. • Enhanced PWM rejection • 2.7 to 5.5 V supply voltage • Internal fixed gain – TSC2020: 20 V/V – TSC2021: 50 V/V – TSC2022: 100 V/V

文件：5.97976 Mbytes 页数：48 Pages

STMICROELECTRONICS

意法半导体