UFT2010

ULTRAFASTRECOVERYRECTIFIERS

UHPC2010

FoilPrecisionChipResistor

UHV2010

Ultra-HighVoltageChipResistor

Features: •Voltageratingsto20000Volts •Resistancevaluesto10Gohms •Ultra-highstability •Verylownoise •Tolerancesto1 •Tolerances10andwideraretypicallyuntrimmed •TCRto100ppm/ºC •RoHScompliantandhalogenfree •REACHcompliant

ULN2010

DRIVERCIRCUITSPECIALPURPOSEFORMICROWAVEOVEN

ULS-2010H

SELECTIONGUIDETOHIGH-VOLTAGE/HIGH-CURRENT

ULS-2010R

SELECTIONGUIDETOHIGH-VOLTAGE/HIGH-CURRENT

UP-2010

EnterpriseNetworkSecurityAppliancewithHigh-densityPortsandPoE

UPG2010TB

L-BANDSPDTSWITCH

DESCRIPTION TheµPG2010TBisGaAsMMICforL-bandSPDT(SinglePoleDoubleThrow)switchwhichweredevelopedformobilephoneandanotherL-bandapplication. Thisdevicecanoperatefrequencyfrom0.5to2.5GHz,havingthelowinsertionlossandhighisolation. Thisdeviceishousedina6-pi

UPG2010TB

HIGHPOWERSINGLECONTROLL-BANDSPDTSWITCH

DESCRIPTION NECsUPG2010TBisasinglecontrolGaAsMMICL-bandSPDT(SinglePoleDoubleThrow)switchformobilephoneandL-bandapplications. Thisdevicecanoperatefrom0.5to2.5GHz,withlowinsertionlossandhighisolation. Thisdeviceishousedina6-pinsuperminimoldpackage,suit

UPG2010TB

GaAsINTEGRATEDCIRCUIT

FEATURES •Supplyvoltage:VDD=2.7to3.0V(2.8VTYP.) •Switchcontrolvoltage:Vcont(H)=2.7to3.0V(2.8VTYP.) :Vcont(L)=−0.2to+0.2V(0VTYP.) •Lowinsertionloss:LINS1=0.25dBTYP.@f=0.5to1.0GHz,VDD=2.8V,Vcont=2.8V/0V :LINS2=0.30dBTYP.@f=2.